Dr. KARUN RAWAT
Department of Electronics and communication Engineering
Broad-band power efficient amplification scheme for high crest factor signals and LTE carrier aggregation.
Multi-port networks for wideband wireless communication signals with high power direct modulation.
All-digital transmitters with spectral and energy efficient power amplification.
Broad-band/Multi-band harmonically terminated power amplifiers.
CMOS and GaN MMIC based power amplifiers design.
Project Grant and Consultancy
Ongoing DST, Government of India Grant Project on “Broad-Band Gallium Nitride Based Doherty Power Amplifier for Efficient Amplification of High Crest Factor Signals”. (Amount: Rs. 54,00000).
Funding grant on “Lab Facility for RF and Baseband techniques in Software Defined Radio” under IIT Non-planned Budget (Amount: Rs. 28,00000).
Consultancy project completed on “Experiments development for Software defined radio SDR-Lab” by M/S Amitec Electronics Ltd., New Delhi. (Total Amount: Rs. 5,86000).
Consultancy project completed on “RF Power Amplifier Design based on SSPL GaN Devices” by SSPL, DRDO, New Delhi. (Total Amount: Rs. 9,50000).(Accepted)
1. Wenhua Chen, Karun Rawat, Fadhel M. Ghannouchi, "Multiband RF Circuits and Techniques for Wireless Transmitters", Publisher: Springer, ISBN/DOI: ISBN: 978-3-662-50438-3, DOI: 10.1007/978-3-662-50440-6, Edition 1, 2016.